发明授权
- 专利标题: Photoconductive member comprising (SI-GE)-SI and N
- 专利标题(中): 包含(SI-GE)-SI和N
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申请号: US646511申请日: 1984-08-31
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公开(公告)号: US4585719A公开(公告)日: 1986-04-29
- 发明人: Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
- 申请人: Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX58-162726 19830905; JPX58-163434 19830906; JPX58-167747 19830912; JPX58-169925 19830914; JPX58-191986 19831014; JPX58-197332 19831021
- 主分类号: G03G5/082
- IPC分类号: G03G5/082 ; H01L31/09 ; G03G5/14
摘要:
A photoconductive member comprises a support for a photoconductive member and a light receiving layer overlaying the support comprising a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms, the first layer region (G) and the second layer region (S) being provided in this order from the support side, and the distribution of germanium atoms in the said first layer (G) being not uniform in the layer thickness direction and nitrogen atoms being contained in the light receiving layer. There may be provided on the light receiving layer a layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms.
公开/授权文献
- US5745195A Liquid crystal electrooptical device 公开/授权日:1998-04-28
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