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    Method of producing a semiconductor device
    1.
    发明授权
    Method of producing a semiconductor device 失效
    半导体装置的制造方法

    公开(公告)号：US5635408A

    公开(公告)日：1997-06-03

    申请号：US429721

    申请日：1995-04-27

    申请人： Masafumi Sano ,  Keishi Saitoh

    发明人： Masafumi Sano ,  Keishi Saitoh

    IPC分类号： H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

    CPC分类号： H01L31/076 ,  H01L31/056 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/905 ,  Y10S438/909

    摘要： A method of producing a semiconductor device including a substrate and a semiconductor region, the semiconductor region including at least one pin structure in the form of a multi-layer structure consisting of a non-single crystal n-type (or p-type) layer containing silicon, a non-single crystal i-type layer containing silicon, and a non-single crystal p-type (or n-type) layer containing silicon, the method being characterized in that it includes a step of performing plasma treatment on the surface of the substrate or the surface of one semiconductor layer, wherein the plasma treatment is performed in an atmosphere including a hydrogen gas and another gas containing silicon atoms without or with very thin deposition of a film onto the surface.In this method, the hydrogen gas ambient is excited into a stable plasma state, and impurities adsorbed on the surface of the chamber wall or contained in the chamber wall are prevented from being incorporated into the semiconductor layers thereby achieving a high performance photovoltaic semiconductor device.

    摘要翻译： 一种制造包括衬底和半导体区域的半导体器件的方法，所述半导体区域包括由非单晶n型（或p型）层构成的多层结构形式的至少一个引脚结构 含硅的非单晶i型层和含有硅的非单晶p型（或n型）层，该方法的特征在于包括对其进行等离子体处理的步骤 衬底的表面或一个半导体层的表面，其中等离子体处理在包括氢气和含有硅原子的另一种气体的气氛中进行，没有或非常薄的膜沉积到表面上。 在该方法中，氢气环境被激发成稳定的等离子体状态，并且防止吸附在室壁表面或容纳在室壁中的杂质被并入半导体层中，从而实现高性能的光电半导体器件。

    Process for the formation of a functional deposited film by way of microwave plasma CVD method
    3.
    发明授权
    Process for the formation of a functional deposited film by way of microwave plasma CVD method 失效
    通过微波等离子体CVD法形成功能沉积膜的工艺

    公开(公告)号：US4897281A

    公开(公告)日：1990-01-30

    申请号：US198746

    申请日：1988-05-25

    申请人： Takayoshi Arai ,  Shigehira Iida ,  Keishi Saitoh ,  Junichiro Hashizume ,  Tetsuya Takei

    发明人： Takayoshi Arai ,  Shigehira Iida ,  Keishi Saitoh ,  Junichiro Hashizume ,  Tetsuya Takei

    IPC分类号： C23C16/50 ,  B01J19/12 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L31/0248

    CPC分类号： H01J37/32935 ,  B01J19/126 ,  C23C16/511 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262 ,  B01J2219/0894

    摘要： According to the present invention, there is provided an improved process for the formation of a deposited film by way of a microwave plasma CVD method, the improvement comprising monitoring an effective power of a microwave to be introduced into a reaction chamber, leading to a control means an output signal indicative of the effective power corresponding a plasma intensity, and automatically controlling the matching between the reaction chamber and the microwave to be introduced into the reaction chamber according to an output signal from the control means. According to the above process, even after a long discharge time has elapsed, the plasma intensity in the reaction chamber may be maintained constant, and the effective power of the microwave to be introduced into the reaction chamber may be therefore maintained constant. Because of this, it becomes possible to repeatedly and stably prepare a desired deposited film excelling in the uniformity of the thickness and that of the quality at a high deposition rate.

    摘要翻译： 根据本发明，提供了一种通过微波等离子体CVD法形成沉积膜的改进方法，其改进包括监测要引入反应室的微波的有效功率，从而进行控制 表示表示与等离子体强度相对应的有效功率的输出信号，并且根据来自控制装置的输出信号自动控制反应室与微波之间的匹配以引入反应室。 根据上述处理，即使经过长时间的放电时间，反应室内的等离子体强度也可以保持恒定，因此可以将导入反应室的微波的有效功率保持恒定。 因此，能够以高的沉积速度重复且稳定地制备在厚度均匀性和质量均匀性方面优异的所需沉积膜。

    Process for producing electroluminescent devices
    4.
    发明授权
    Process for producing electroluminescent devices 失效
    电致发光器件的制造方法

    公开(公告)号：US4804558A

    公开(公告)日：1989-02-14

    申请号：US942793

    申请日：1986-12-17

    申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    IPC分类号： C09K11/00 ,  C09K11/56 ,  C09K11/88 ,  C23C16/30 ,  C23C16/44 ,  G09F9/30 ,  H01L21/205 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  B05D5/06 ,  B05D5/12

    CPC分类号： H05B33/145 ,  H05B33/10

    摘要： A process for producing an electroluminescent device comprises providing in a film forming space for forming an electroluminescent film a substrate having an electrode formed on the surface thereof, said electrtode optionally having a first insulating layer formed thereon, introducing into said film forming space the compounds (A), (B) and (C) represented by the general formulae (A), (B) and (C) shown below and a gaseous halogenic oxidizing agent capable of chemically reacting with at least one of said compounds (A), (B) and (C), respectively, to thereby form an electroluminescent film on said electrode of said substrate, and if desired forming a second insulating layer and electrode in succession thereon:MmRn (A)AaBb (B)JjQq (C)wherein m is a positive integer equal to the valence of R or said valence multiplied by an integer, n is a positive integer equal to the valence of M or said valence multiplied by an integer, M is zinc (Zn) element, R is hydrogen (H), halogen (X) or hydrocarbon group; a is a positive integer equal to the valence of B or said valence multiplied by an integer, b is a positive integer equal to the valence of A or said valence multiplied by an integer, A is sulfur (S) or selenium (Se) element, B is hydrogen (H), halogen (X) or hydrocarbon group; j is a positive integer equal to the valence of Q or said valence multiplied by an integer, q is a positive integer equal to the valence of J or said valence multiplied by an integer, J is manganese (Mn) or a rare earth metal element, Q is hydrogen (H), halogen (X) or hydrocarbon group.

    摘要翻译： 一种电致发光器件的制造方法，其特征在于，在形成电致发光膜的膜形成空间中设置具有形成在其表面上的电极的基板，所述电极可任选地具有形成在其上的第一绝缘层，将所述化合物 A），（B）和（C）和下述通式（A），（B）和（C）表示的气态卤素氧化剂：能够与所述化合物（A）， B）和（C），从而在所述基板的所述电极上形成电致发光膜，并且如果需要，则依次形成第二绝缘层和电极：MmRn（A）AaBb（B）JjQq（C）其中m 是等于R的化合价或所述价数乘以整数的正整数，n是等于M的价数或所述化合价乘以整数的正整数，M是锌（Zn）元素，R是氢（H ），卤素（X）或水合 bon组 a是等于B的价数或所述化合价乘以整数的正整数，b是等于A的价数或所述价数乘以整数的正整数，A是硫（S）或硒（Se）元素 ，B为氢（H），卤素（X）或烃基; j是等于Q的化合价或所述化合价乘以整数的正整数，q是等于J的化合价或所述化合价乘以整数的正整数，J是锰（Mn）或稀土金属元素 Q是氢（H），卤素（X）或烃基。

    Member having light receiving layer with smoothly interconnecting nonparallel interfaces
    7.
    发明授权
    Member having light receiving layer with smoothly interconnecting nonparallel interfaces 失效
    具有光接收层的成员具有平滑地互连的非平行接口

    公开(公告)号：US4696882A

    公开(公告)日：1987-09-29

    申请号：US753011

    申请日：1985-07-08

    申请人： Keishi Saitoh ,  Tetsuo Sueda ,  Kyosuke Ogawa ,  Teruo Misumi ,  Yoshio Tsuezuki ,  Masahiro Kanai

    发明人： Keishi Saitoh ,  Tetsuo Sueda ,  Kyosuke Ogawa ,  Teruo Misumi ,  Yoshio Tsuezuki ,  Masahiro Kanai

    IPC分类号： G03G5/082 ,  G03G5/10 ,  G03G5/085

    CPC分类号： G03G5/08228 ,  G03G5/10

    摘要： A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided successively from the substrate side, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being aranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction, said non-parallel interfaces being connected to one another smoothly in the direction in which they are arranged.

    摘要翻译： 光接收部件包括基板和具有第一层的多层结构的光接收层，该第一层包括含有硅原子和锗原子的非晶态材料，以及第二层，其包含含有硅原子的非晶态材料并呈现出依次提供的光电导性 所述光接收层在短距离范围内具有至少一对非平行界面，并且所述非平行界面在垂直于层厚度方向的平面内的至少一个方向上大量排列 所述非平行接口在它们被布置的方向上平滑地相互连接。

    Photoconductive member having light receiving layer of A-Ge/A-Si and C
    9.
    发明授权
    Photoconductive member having light receiving layer of A-Ge/A-Si and C 失效
    具有A-Ge / A-Si和C的光接收层的感光体

    公开(公告)号：US4642277A

    公开(公告)日：1987-02-10

    申请号：US663965

    申请日：1984-10-23

    申请人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

    发明人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

    IPC分类号： G03G5/082 ,  G03G5/085

    CPC分类号： G03G5/08228

    摘要： A photoconductive member is provided which has substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity consisting of an amorphous material containing silicon atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN).sub.max of the distribution concentration of said substance (c) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

    摘要翻译： 提供了一种光电导元件，其具有用于光电导元件的基底和具有光导电性的光接收层，该光接收层具有层结构，其中包含含有锗原子的非晶态材料的第一层区域（G）和显示光电导性的第二层区域（S） 含有硅原子的非晶质材料从上述基底侧连续提供，所述光接收层含有碳原子和物质（C），用于在分布状态下控制导电性，使得在所述光接收层中，最大 所述物质（c）在层厚度方向上的分布浓度的值C（PN）max存在于所述第二层区域（S）内，并且在所述第二层区域（S）中，所述物质（C）分布得更大 量在所述衬底的一侧。

    Light receiving member having an amorphous silicon photoconductor
    10.
    发明授权
    Light receiving member having an amorphous silicon photoconductor 失效
    具有非晶硅光电导体的光接收元件

    公开(公告)号：US4637972A

    公开(公告)日：1987-01-20

    申请号：US815123

    申请日：1985-12-30

    申请人： Kyosuke Ogawa ,  Shigeru Shirai ,  Keishi Saitoh ,  Teruo Misumi ,  Junichiro Kanbe

    发明人： Kyosuke Ogawa ,  Shigeru Shirai ,  Keishi Saitoh ,  Teruo Misumi ,  Junichiro Kanbe

    IPC分类号： G03G5/082

    CPC分类号： G03G5/08228

    摘要： A light-receiving member has a substrate and a light receiving layer having photoconductivity containing an amorphous material comprising a matrix of silicon atoms provided on said substrate, said light receiving layer having, from the said support side with respect to the layer thickness direction of said layer, a first layer region containing atoms of the group III of the periodic table at higher concentration toward the side of said substrate and a second layer region containing atoms of the group III of the periodic table and nitrogen atoms.

    摘要翻译： 光接收元件具有基片和具有光电导率的光接收层，该光接收层包含设置在所述基片上的硅原子矩阵的非晶材料，所述光接收层具有从所述支撑侧相对于所述基底的层厚度方向 层，具有朝向所述衬底侧的较高浓度的包含周期表第III族原子的第一层区和含有周期表第III族的原子和氮原子的第二层区。