发明授权
- 专利标题： Low noise polycrystalline semiconductor resistors by hydrogen passivation
- 专利标题（中）： 低噪声多晶半导体电阻通过氢钝化
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申请号： US726558申请日： 1985-04-24
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公开(公告)号： US4602421A公开(公告)日： 1986-07-29
- 发明人: Joseph Y. Lee , Michael H. Kriegel , Thomas Y. Chuh
- 申请人： Joseph Y. Lee , Michael H. Kriegel , Thomas Y. Chuh
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Air Force
- 当前专利权人： The United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址： DC Washington
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/30 ; H01L21/477 ; H01L21/26
摘要：
Low noise polycrystalline silicon resistors are fabricated in the following sequence:(1) deposit an appropriate thickness of polysilicon (e.g. 400 nm) on top of an oxidized wafer(2) resistor doping by ion implantation (e.g. phosphorous)(3) heavy doping of the end-contact regions of the polysilicon resistor by high-dose ion implantation(4) patterning the polysilicon resistor(5) oxidation/annealing the polysilicon resistor(6) open contacts to the polysilicon resistor(7) aluminum metallization to form ohmic contacts(8) a long (e.g. 3 hours) low temperature (e.g. at 375.degree.) pure hydrogen annealing to passivate the interface states in the polysilicon resistor. Polyresistors processed this way have a noise figure that is about a factor of three lower than samples processed otherwise. The low temperature post metallization annealing in pure hydrogen passivates the interfaces of polyresistors, reducing the l/f noise normally generated therein.
公开/授权文献
- US4157840A Motor vehicle wheel suspension arrangement 公开/授权日：1979-06-12
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