公开(公告)号：US4602421A

公开(公告)日：1986-07-29

申请号：US726558

申请日：1985-04-24

申请人： Joseph Y. Lee ,  Michael H. Kriegel ,  Thomas Y. Chuh

发明人： Joseph Y. Lee ,  Michael H. Kriegel ,  Thomas Y. Chuh

IPC分类号： H01L21/02 ,  H01L21/30 ,  H01L21/477 ,  H01L21/26

CPC分类号： H01L28/20 ,  H01L21/3003 ,  Y10S148/136 ,  Y10T29/49082

摘要： Low noise polycrystalline silicon resistors are fabricated in the following sequence:(1) deposit an appropriate thickness of polysilicon (e.g. 400 nm) on top of an oxidized wafer(2) resistor doping by ion implantation (e.g. phosphorous)(3) heavy doping of the end-contact regions of the polysilicon resistor by high-dose ion implantation(4) patterning the polysilicon resistor(5) oxidation/annealing the polysilicon resistor(6) open contacts to the polysilicon resistor(7) aluminum metallization to form ohmic contacts(8) a long (e.g. 3 hours) low temperature (e.g. at 375.degree.) pure hydrogen annealing to passivate the interface states in the polysilicon resistor. Polyresistors processed this way have a noise figure that is about a factor of three lower than samples processed otherwise. The low temperature post metallization annealing in pure hydrogen passivates the interfaces of polyresistors, reducing the l/f noise normally generated therein.

摘要翻译： 低噪声多晶硅电阻器按以下顺序制造：（1）在氧化晶片（2）上沉积适当厚度的多晶硅（例如400nm）（2）通过离子注入（例如磷）掺杂的电阻器（3）重掺杂 多晶硅电阻器的端接触区域通过高剂量离子注入（4）图案化多晶硅电阻器（5）来对多晶硅电阻器（6）进行氧化/退火，使多晶硅电阻器（7）的开路触点铝金属化以形成欧姆接触 8）长（例如3小时）低温（例如在375°）纯氢退火以钝化多晶硅电阻器中的界面态。 以这种方式处理的多晶体管的噪声系数比其他处理的样品低约三分之一。 纯氢气中的低温后金属化退火钝化了多晶硅的界面，降低了其中通常产生的l / f噪声。