发明授权
- 专利标题： High conductance circuit for programmable integrated circuit
- 专利标题（中）： 可编程集成电路的高电导电路
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申请号： US562506申请日： 1983-12-15
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公开(公告)号： US4609998A公开(公告)日： 1986-09-02
- 发明人: Robert J. Bosnyak , Hua T. Chau , Donald Goddard , Sing Wong
- 申请人： Robert J. Bosnyak , Hua T. Chau , Donald Goddard , Sing Wong
- 申请人地址： CA Santa Clara
- 专利权人： Monolithic Memories, Inc.
- 当前专利权人： Monolithic Memories, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： G11C17/08
- IPC分类号： G11C17/08 ; G11C17/18 ; G11C17/00
摘要：
A unique programming circuit, suitable for use with programmable read-only memories (PROM), or other circuits utilizing programmable fuses, is provided which overcomes several distinct disadvantages of prior art programming circuits. The programming circuit of this invention includes a Darlington pair of programming transistors which allows only a single programming transistor to be made large in order to carry the large programming current, and only a single high current drive signal need be applied to the single programming transistor, thereby minimizing power consumption and integrated circuit die area.
公开/授权文献
- US5667112A Self-storing spout assembly for a container 公开/授权日：1997-09-16
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