发明授权
- 专利标题: Gate turn-off thyristor
- 专利标题(中): 门极关断晶闸管
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申请号: US671197申请日: 1984-11-14
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公开(公告)号: US4617583A公开(公告)日: 1986-10-14
- 发明人: Takashi Shinohe , Masayuki Asaka
- 申请人: Takashi Shinohe , Masayuki Asaka
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX59-44123 19840309
- 主分类号: H01L29/74
- IPC分类号: H01L29/74 ; H01L29/08 ; H01L29/744
摘要:
A gate turn-off thyristor has a first emitter layer having a P.sup.+ P.sup.- emitter structure which is in contact with an anode electrode and a second emitter layer having an N-type multi-emitter structure which is in contact with cathode electrodes. To reduce power dissipation in the turn-off process, the first emitter layer mainly consists of low impurity concentration regions, and each high impurity concentration region is formed to have a substantially uniform width and to surround the low impurity concentration region formed within a region of the first emitter layer immediately below one of the emitter strips of the second emitter layer.