发明授权
- 专利标题: Static storage cell
- 专利标题(中): 静态存储单元
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申请号: US637026申请日: 1984-08-02
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公开(公告)号: US4626887A公开(公告)日: 1986-12-02
- 发明人: Doris Schmitt-Landsiedel , Gerhard Dorda
- 申请人: Doris Schmitt-Landsiedel , Gerhard Dorda
- 申请人地址: DEX Berlin & Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Berlin & Munich
- 优先权: DEX3330013 19830819
- 主分类号: G11C11/412
- IPC分类号: G11C11/412 ; H01L21/8249 ; H01L27/06 ; H01L27/10 ; H01L29/76 ; H01L27/02 ; G11C11/34 ; H01L29/80 ; H01L49/02
摘要:
A static storage cell is formed of two cross-coupled inverters each containing a field effect transistor and a resistor element connected in series therewith. Each circuit node is thus connected via an additional logic element to a bit line allocated thereto. A storage cell is provided which is on as small as possible a semiconductor area and has a short access time. This is achieved by designing the additional logic elements as hot electron transistors which are respectively combined with one of the field effect transistors to form a common component which only requires the area of a field effect transistor. The cell is useful in VLSI semiconductor memories.
公开/授权文献
- US5625630A Increasing testability by clock transformation 公开/授权日:1997-04-29
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