Invention Grant
- Patent Title: Superluminescent light-emitting diode and related method
- Patent Title (中): 超发光二极管及相关方法
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Application No.: US724870Application Date: 1985-04-19
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Publication No.: US4634928APublication Date: 1987-01-06
- Inventor: Luis Figueroa , Joseph W. Niesen , Lawrence M. Zinkiewicz , Charles B. Morrison
- Applicant: Luis Figueroa , Joseph W. Niesen , Lawrence M. Zinkiewicz , Charles B. Morrison
- Applicant Address: CA Redondo Beach
- Assignee: TRW Inc.
- Current Assignee: TRW Inc.
- Current Assignee Address: CA Redondo Beach
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S5/00 ; H01S3/19
Abstract:
A superluminescent light-emitting diode in which the spectral width of the output increases with increasing optical output power, thereby allowing the generation of high optical output powers with a broad frequency spectrum that is desirable for some applications of the superluminescent diodes. This desirable characteristic is obtained by structuring the diode to produce a non-uniform gain profile across its active layer. Alternative approaches for achieving the non-uniform gain profile include varying the thickness of the active layer, and varying the current density by employing an asymmetrical channel configuration or an asymmetrical electrical contact strip.
Public/Granted literature
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