发明授权
- 专利标题: Self turnoff type semiconductor switching device
- 专利标题(中): 自熄型半导体开关器件
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申请号: US706615申请日: 1985-02-28
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公开(公告)号: US4635086A公开(公告)日: 1987-01-06
- 发明人: Junichi Miwa , Minoru Kato
- 申请人: Junichi Miwa , Minoru Kato
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX59-209767 19841008
- 主分类号: H01L29/423
- IPC分类号: H01L29/423 ; H01L29/74 ; H01L29/744 ; H01L29/749
摘要:
A semiconductor switching device includes first to fourth layers, a first gate portion, a second gate portion and a common gate terminal interconnecting the first and second gate portions. The first gate portion is the current control type and has a rectifying PN junction, and the second gate portion is the voltage control type. When a first polarity vias voltage is applied to the common gate terminal, the device turns on through the second gate portion, while turns off through the first gate portion when a second polarity vias voltage is applied to the terminal.
公开/授权文献
- US5976588A Food package with filling nozzle 公开/授权日:1999-11-02
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