发明授权
- 专利标题: Semiconductor laser device having a double heterojunction structure
- 专利标题(中): 具有双异质结结构的半导体激光器件
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申请号: US627818申请日: 1984-07-05
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公开(公告)号: US4635268A公开(公告)日: 1987-01-06
- 发明人: Nawoto Motegi , Masaki Okajima , Yuhei Muro
- 申请人: Nawoto Motegi , Masaki Okajima , Yuhei Muro
- 申请人地址: JPX
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX
- 优先权: JPX58-121371 19830704
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/223 ; H01S3/19
摘要:
A double heterojunction structure type semiconductor laser device comprising an active layer of GaAlAs in which the laser is excited, n-Ga.sub.0.45 Al.sub.0.55 As clad layer and a p-Ga.sub.0.45 Al.sub.0.55 As clad layer sandwiching the active layer between them in order to confine the laser light in the active layer, an n-GaAs current blocking layer disposed between the active layer and the p-Ga.sub.0.45 Al.sub.0.55 As clad layer in order to confine current, and a p-Ga.sub.0.63 Al.sub.0.37 As optical waveguide layer disposed between the active layer and the current confinement layer. The refractive index of the optical waveguide layer is greater than that of the both of the clad layers.
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