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    Semiconductor laser device
    1.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4858241A

    公开(公告)日：1989-08-15

    申请号：US198859

    申请日：1988-05-26

    申请人： Nobuo Suzuki ,  Motoyasu Morinaga ,  Hideto Furuyama ,  Yuzo Hirayama ,  Hajime Okuda ,  Masaru Nakamura ,  Nawoto Motegi

    发明人： Nobuo Suzuki ,  Motoyasu Morinaga ,  Hideto Furuyama ,  Yuzo Hirayama ,  Hajime Okuda ,  Masaru Nakamura ,  Nawoto Motegi

    IPC分类号： H01S5/02 ,  H01S5/026 ,  H01S5/042 ,  H01S5/227 ,  H01S5/323

    CPC分类号： H01S5/0422 ,  H01S5/026 ,  H01S5/227 ,  H01S5/0208 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/32391

    摘要： A semiconductor laser device comprises a semiconductor mesa portion formed above semiconductor substrate by a predetermined interval, an active region, formed between the mesa portion and semiconductor substrate and consisting of a semiconductor having a forbidden band width smaller than those of the mesa portion and semiconductor substrate, for contributing to light emission, a pair of buried portions formed at both sides in a widthwise direction of and in contact with the active region and consisting of a semiconductor having a forbidden band width larger than that of the active region, a total width of the buried portions and the active region being smaller than that of the mesa portion, thereby forming a gap at a side of each of the buried portions between the mesa portion and semiconductor substrate to electrically insulate the mesa portion and semiconductor substrate, and supporting portions formed integrally with the mesa portion so as to support the mesa portion with respect to the substrate in association with the active region and the buried portions.

    摘要翻译： 一种半导体激光器件，包括在半导体衬底上形成预定间隔的半导体台面部分，形成在台面部分和半导体衬底之间的有源区域，其具有禁带宽度小于台面部分和半导体衬底的宽度的半导体 用于有助于发光的一对掩埋部分，形成在有源区域的宽度方向两侧并且与有源区域接触的一对掩埋部分，并且由禁带宽度大于有源区域的宽度的半导体构成， 埋入部分和有源区域小于台面部分，从而在台面部分和半导体衬底之间的每个掩埋部分的一侧形成间隙，以使台面部分和半导体衬底电绝缘，形成的支撑部分 与台面部分一体地相对于台面部分支撑 与有源区域和掩埋部分相关联的衬底。

    Semiconductor laser device having a double heterojunction structure
    4.
    发明授权
    Semiconductor laser device having a double heterojunction structure 失效
    具有双异质结结构的半导体激光器件

    公开(公告)号：US4635268A

    公开(公告)日：1987-01-06

    申请号：US627818

    申请日：1984-07-05

    申请人： Nawoto Motegi ,  Masaki Okajima ,  Yuhei Muro

    发明人： Nawoto Motegi ,  Masaki Okajima ,  Yuhei Muro

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231

    摘要： A double heterojunction structure type semiconductor laser device comprising an active layer of GaAlAs in which the laser is excited, n-Ga.sub.0.45 Al.sub.0.55 As clad layer and a p-Ga.sub.0.45 Al.sub.0.55 As clad layer sandwiching the active layer between them in order to confine the laser light in the active layer, an n-GaAs current blocking layer disposed between the active layer and the p-Ga.sub.0.45 Al.sub.0.55 As clad layer in order to confine current, and a p-Ga.sub.0.63 Al.sub.0.37 As optical waveguide layer disposed between the active layer and the current confinement layer. The refractive index of the optical waveguide layer is greater than that of the both of the clad layers.

    摘要翻译： 一种双异质结结构型半导体​​激光器件，包括其中激发激光的GaAlAs的有源层，n-Ga0.45Al0.55As包层和在其之间夹持有源层的p-Ga0.45Al0.55As覆层，以便 将激光限制在有源层中，n-GaAs电流阻挡层设置在有源层和p-Ga0.45Al0.55As包层之间以限制电流，并且p-Ga0.63Al0.37As光波导层 设置在有源层和电流限制层之间。 光波导层的折射率大于两层包层的折射率。

    Dry etching method of compound semiconductor
    6.
    发明授权
    Dry etching method of compound semiconductor 失效
    化学半导体的干蚀刻方法

    公开(公告)号：US4640737A

    公开(公告)日：1987-02-03

    申请号：US664965

    申请日：1984-10-26

    申请人： Hiroko Nagasaka ,  Nawoto Motegi

    发明人： Hiroko Nagasaka ,  Nawoto Motegi

    IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

    CPC分类号： H01L21/302 ,  H01L21/30621

    摘要： A compound semiconductor is dry-etched by introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode for supporting a workpiece comprising a compound semiconductor and an anode opposite thereto. High-frequency electric power is applied between the cathode and the anode, thereby generating a plasma from the introduced plasma-generating gas. The compound semiconductor is etched with the thus formed plasma.

    摘要翻译： 通过将包含三氯化硼和氯的等离子体产生气体引入到等离子体产生区域中进行干蚀刻，所述等离子体产生区域被限定在用于支撑包含化合物半导体的工件的阴极和与其相对的阳极之间。 在阴极和阳极之间施加高频电力，从而引入等离子体产生气体的等离子体。 用这样形成的等离子体蚀刻化合物半导体。

    Semiconductor laser device having current confining and built-in waveguide structure
    7.
    发明授权
    Semiconductor laser device having current confining and built-in waveguide structure 失效
    具有电流限制和内置波导结构的半导体激光器件

    公开(公告)号：US4691321A

    公开(公告)日：1987-09-01

    申请号：US686478

    申请日：1984-12-26

    申请人： Nawoto Motegi ,  Yukio Watanabe ,  Naohiro Shimada ,  Masaki Okajima

    发明人： Nawoto Motegi ,  Yukio Watanabe ,  Naohiro Shimada ,  Masaki Okajima

    IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/32316

    摘要： A hetero junction type semiconductor laser device is provided wherein a hetero layer is formed on a clad layer leaving a stripe shape portion. The clad layer is formed on an active layer over a substrate. At least two coating layers of the same conductivity type as the clad layer are formed on the hetero layer so as to have a current confining effect and a built-in waveguide effect. The refractive index of the coating layers which is nearer to the active layer is greater than the refractive index of the clad layer and the refractive index of the other coating layer is smaller than the refractive index of the coating layer which is nearer to the active layer. Using this construction, a low lasing threshold current is achieved.

    摘要翻译： 提供了一种异质结型半导体激光器件，其中在留下条形部分的包覆层上形成异质层。 覆层在衬底上的有源层上形成。 在异质层上形成与包覆层相同导电类型的至少两个涂层，以具有电流限制效应和内置波导效应。 更靠近有源层的涂层的折射率大于包覆层的折射率，另一个涂层的折射率小于更靠近有源层的涂层的折射率 。 使用这种结构，实现了低激光阈值电流。

    Semiconductor laser device and method for manufacturing the same
    8.
    发明授权
    Semiconductor laser device and method for manufacturing the same 失效
    半导体激光装置及其制造方法

    公开(公告)号：US4647953A

    公开(公告)日：1987-03-03

    申请号：US570301

    申请日：1984-01-13

    申请人： Masaki Okajima ,  Nawoto Motegi ,  Yuhei Muto

    发明人： Masaki Okajima ,  Nawoto Motegi ,  Yuhei Muto

    IPC分类号： H01L21/205 ,  H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01L33/00

    CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/2059

    摘要： A rib-waveguide semiconductor laser device comprising a first clad layer, an active layer, an optical rib-waveguide layer and a second clad layer, each composed of III-V semiconductor material, and sequentially formed on an insulating substrate or a III-V semiconductor substrate, wherein the rib-waveguide layer contains aluminum. A method for manufacturing the semiconductor laser device as defined above wherein the second clad layer is formed by metal-organic material chemical vapor deposition or molecular beam epitaxy.

    摘要翻译： 一种肋波导半导体激光器件，包括由III-V族半导体材料构成的第一覆盖层，有源层，光学肋波导层和第二覆盖层，并且依次形成在绝缘基板或III-V 半导体衬底，其中所述肋波导层包含铝。 一种如上所述制造半导体激光器件的方法，其中第二覆层由金属 - 有机材料化学气相沉积或分子束外延形成。