发明授权
- 专利标题： Semiconductor device with an improved bonding section
- 专利标题（中）： 具有改进的接合部分的半导体器件
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申请号： US837663申请日： 1986-03-04
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公开(公告)号： US4636832A公开(公告)日： 1987-01-13
- 发明人: Masahiro Abe , Masaharu Aoyama , Takashi Ajima , Toshio Yonezawa
- 申请人： Masahiro Abe , Masaharu Aoyama , Takashi Ajima , Toshio Yonezawa
- 申请人地址： JPX Kawasaki
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX57-129563 19820727
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/485 ; H01L23/532 ; H01L23/14
摘要：
A semiconductor device with a bonding section comprising a semiconductor substrate, a silicon layer formed on the semiconductor substrate with a first insulating layer interposed therebetween, and a bonding pad formed on the silicon layer with a second insulating layer interposed therebetween. The silicon layer has substantially the same size as the bonding pad. When a lead line is bonded to the bonding pad, the silicon layer lessens the stress caused by the bonding.
公开/授权文献
- US5908815A Heat resistant grease 公开/授权日：1999-06-01
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