发明授权
- 专利标题： Method for producing GaAs single crystal
- 专利标题（中）： 制造GaAs单晶的方法
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申请号： US571091申请日： 1984-01-16
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公开(公告)号： US4637854A公开(公告)日： 1987-01-20
- 发明人: Tsuguo Fukuda , Kazutaka Terashima
- 申请人： Tsuguo Fukuda , Kazutaka Terashima
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Agency of Industrial Science and Technology,Ministry of International Trade and Industry
- 当前专利权人： Agency of Industrial Science and Technology,Ministry of International Trade and Industry
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX58-5181 19830118; JPX58-78899 19830507; JPX58-78900 19830507
- 主分类号： C30B15/30
- IPC分类号： C30B15/30 ; C30B15/22 ; C30B27/02
摘要：
A method for the production of a gallium arsenide single crystal which comprises bringing a seed crystal into contact with a fused layer of raw materials for the crystal while applying to the fused layer a magnetic field which has intensity enabling the temperature fluctuation in the neighborhood of the solid-liquid boundary in the fused layer to be repressed to within 1.degree. C., thereby effecting crystal growth.