发明授权
- 专利标题： Low temperature tunneling transistor
- 专利标题（中）： 低温隧道晶体管
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申请号： US654707申请日： 1984-09-27
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公开(公告)号： US4647954A公开(公告)日： 1987-03-03
- 发明人: Volker Graf , Pierre L. Gueret , Carl A. Mueller
- 申请人： Volker Graf , Pierre L. Gueret , Carl A. Mueller
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 优先权： EPX83113163.6 19831228
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L39/22 ; H01L29/78
摘要：
The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage V.sub.G which modifies the barrier height between source and drain thereby changing the tunnel probability.
公开/授权文献
- US5747833A Apparatus for driving induction motor 公开/授权日：1998-05-05
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