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公开(公告)号：US4647954A
公开(公告)日：1987-03-03
申请号：US654707
申请日：1984-09-27
申请人： Volker Graf , Pierre L. Gueret , Carl A. Mueller
发明人： Volker Graf , Pierre L. Gueret , Carl A. Mueller
CPC分类号： H01L39/228 , H01L29/157 , Y10S505/86
摘要： The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage V.sub.G which modifies the barrier height between source and drain thereby changing the tunnel probability.
摘要翻译： 晶体管包括两个电极，源极（12）和漏极（13），其间布置有半导体隧道通道（11）。 用于施加控制信号的门（14）耦合到通道。 半导体在低温下的行为就像具有低势垒（一些meV）的绝缘体，电荷载体可以在所施加的漏极电压的影响下隧穿。 隧道电流可以通过栅极电压VG来控制，栅极电压VG改变源极和漏极之间的势垒高度，从而改变隧道概率。
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公开(公告)号：US5439876A
公开(公告)日：1995-08-08
申请号：US108138
申请日：1993-08-16
申请人： Volker Graf , Carl A. Mueller
发明人： Volker Graf , Carl A. Mueller
IPC分类号： C30B23/08 , C01G1/00 , C23C14/08 , C23C14/24 , C30B25/02 , C30B29/22 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24 , C30B19/10 , C01F11/00
CPC分类号： B82Y30/00 , C30B25/02 , C30B29/68 , H01L39/126 , H01L39/2458
摘要： A method for making layered structures of artificial high T.sub.c superconductor compounds by which on top of a seed crystal having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.
摘要翻译： 制造人造高Tc超导体化合物的层状结构的方法，其中在具有与要制备的超导体化合物的晶格结构匹配的晶格结构的晶种的顶部上，以预定的顺序外延生长所有构成组分的氧化物层， 以产生在天然晶体中未发现的夹心结构。 构成组分的外延沉积在具有蒸发设备，金属有机气体入口和包括氧气的背景气体入口的反应室中进行。
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公开(公告)号：US5528052A
公开(公告)日：1996-06-18
申请号：US171888
申请日：1993-12-22
CPC分类号： H01L39/146
摘要： Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer, where the resistance of said current channel is controlled by varying the critical current of the superconducting material through the application of an electrical field across the superconducting current channel, which in turn changes the density of the mobile charge carriers in the superconducting material. Taught is also an inverted MISFET device for performing that method, the device being characterized in that on an electrically conductive substrate an insulating layer is provided which in turn carries a layer consisting of a superconducting material, and that a gate electrode is attached to said substrate, and source and drain electrodes are electrically connected to said superconductor layer. Advantageously, between the substrate and the superconducting layer, a metallic passivation layer may be provided.
摘要翻译： 提出了一种用于操作场效应器件的方法，该场效应器件包括具有与其连接的源电极和漏电极的超导电流通道，所述超导电流通道由绝缘层与栅电极分离，其中所述电流通道的电阻由 通过在超导电流通道上施加电场来改变超导材料的临界电流，这继而改变超导材料中的可移动电荷载流子的密度。 教授也是用于执行该方法的反向MISFET器件，其特征在于，在导电衬底上提供绝缘层，该绝缘层又带有由超导材料组成的层，并且栅电极附着到所述衬底 并且源电极和漏电极电连接到所述超导体层。 有利地，在衬底和超导层之间可以提供金属钝化层。
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4.发明授权Method for making a superconducting field-effect transistor with inverted MISFET structure 失效制造具有反向MISFET结构的超导场效应晶体管的方法
公开(公告)号：US5278136A
公开(公告)日：1994-01-11
申请号：US731821
申请日：1991-07-16
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/706 , Y10T29/413
摘要： This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0 .cent..delta..ltoreq.0.5.While the preferred embodiment of the present invention has been herein described, numerous modifications, changes and improvements will occur to those skilled in the art without departing from the spirit and scope of the present invention.
摘要翻译： 该场效应晶体管包括用作栅电极的导电基板（2），绝缘阻挡层（3）和位于阻挡层（3）顶部的超导沟道层（1）。 超导体层（1）分别承载形成源极和漏极的一对相互间隔开的电极（4,5）。 衬底设置有适当的栅极触点（6）。 基板（2）由属于与阻挡层（3）相同的晶体族的材料构成。 在优选实施例中，衬底（2）是铌掺杂的钛酸锶，阻挡层（3）是未掺杂的钛酸锶，并且超导体（1）是具有晶格常数至少大致相似于 衬底（2）和屏障（3）层的材料之一。 这种类型的优选材料是YBa2Cu3O7-（delta），其中0（cent）（delta）<= 0.5。 虽然本文描述了本发明的优选实施例，但是在不脱离本发明的精神和范围的情况下，本领域技术人员将会想到许多修改，改变和改进。
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公开(公告)号：US5401714A
公开(公告)日：1995-03-28
申请号：US238184
申请日：1994-05-04
申请人： Preveen Chaudhari , Carl A. Mueller , Hans P. Wolf
发明人： Preveen Chaudhari , Carl A. Mueller , Hans P. Wolf
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/78 , Y10S505/873
摘要： A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.sup.21 /cm.sup.3 and a correlation length of about 0.2 nm. The channel thickness is preferrable in the order of 1 nm. The superconductor is preferably a single crystalline and oriented such that the superconducting behavior is strongest in the plane parallel to the substrate. With a signal of a few volts applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between a "zero resistance" (undepleted, superconducting) state and "very high resistance" (depleted state).
摘要翻译： 场效应结构形成在衬底上并且包括具有源极和漏极的沟道以及通过绝缘层与沟道分离的栅极。 通道由高Tc金属氧化物超导体（例如YBaCuO）制成，其载流子密度约为1021 / cm3，相关长度约为0.2nm。 通道厚度优选为1nm左右。 超导体优选为单晶并且取向为使得在平行于衬底的平面中超导行为最强。 利用施加到栅极的几伏的信号，整个沟道横截面耗尽电荷载流子，从而可以在“零电阻”（未剥离，超导）状态和“非常高电阻”（耗尽）之间切换沟道电阻 州）。
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公开(公告)号：US5240906A
公开(公告)日：1993-08-31
申请号：US864754
申请日：1992-04-07
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/729
摘要： An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.
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7.发明授权Method for manufacturing lattice-matched substrates for high-T.sub.c superconductor films 失效用于制造高Tc超导体膜的晶格匹配衬底的方法
公开(公告)号：US5602080A
公开(公告)日：1997-02-11
申请号：US193919
申请日：1994-02-09
CPC分类号： C30B29/225 , C30B11/00 , C30B13/00 , C30B15/00 , H01L39/2454 , Y10S505/729
摘要： This method for manufacturing lattice-matched substrates for high-T.sub.c superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the selected superconductor material, while the other one has a lattice constant greater than the lattice constant of the perovskite subcell of the selected superconductor. These materials are then powdered and mixed intimately for providing a single-crystal either from the molten mixture of the chosen materials or by thin film deposition, said single-crystal containing appropriate molar percentages of the chosen materials so that resulting lattice constant is essentially the same as that of the selected superconductor material.
摘要翻译： 用于制造用于高Tc超导体的晶格匹配衬底的方法采用选自已知合适衬底材料的组中的至少两种材料，其中晶体常数小于所选择的钙钛矿型电池的晶格常数 超导体材料，而另一个具有大于所选超导体的钙钛矿亚电池的晶格常数的晶格常数。 然后将这些材料粉碎和混合，以从所选材料的熔融混合物中或通过薄膜沉积提供单晶，所述单晶含有所选材料的适当摩尔百分比，使得得到的晶格常数基本相同 如所选择的超导体材料。
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8.发明授权
公开(公告)号：US5382565A
公开(公告)日：1995-01-17
申请号：US139958
申请日：1993-10-20
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/706 , Y10T29/413
摘要： This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0.ltoreq..delta..ltoreq.0.5.
摘要翻译： 该场效应晶体管包括用作栅电极的导电基板（2），绝缘阻挡层（3）和位于阻挡层（3）顶部的超导沟道层（1）。 超导体层（1）分别承载形成源极和漏极的一对相互间隔开的电极（4,5）。 衬底设置有适当的栅极触点（6）。 基板（2）由属于与阻挡层（3）相同的晶体族的材料构成。 在优选实施例中，衬底（2）是铌掺杂的钛酸锶，阻挡层（3）是未掺杂的钛酸锶，并且超导体（1）是具有晶格常数至少大致相似于 衬底（2）和屏障（3）层的材料之一。 这种类型的优选材料是YBa2Cu3O7-δ，其中0≤δ≤0.5。
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9.发明授权Superconducting field-effect transistors with inverted MISFET structure and method for making the same 失效具有反向MISFET结构的超导场效应晶体管及其制造方法
公开(公告)号：US5376569A
公开(公告)日：1994-12-27
申请号：US155042
申请日：1993-11-19
IPC分类号： H01L39/22 , B05D5/12 , H01B12/00 , H01L21/336 , H01L39/14 , H01L39/24 , H01C21/265
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/706 , Y10T29/413
摘要： This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0.ltoreq..delta..ltoreq.0.5.
摘要翻译： 该场效应晶体管包括用作栅电极的导电基板（2），绝缘阻挡层（3）和位于阻挡层（3）顶部的超导沟道层（1）。 超导体层（1）分别承载形成源极和漏极的一对相互间隔开的电极（4,5）。 衬底设置有适当的栅极触点（6）。 基板（2）由属于与阻挡层（3）相同的晶体族的材料构成。 在优选实施例中，衬底（2）是铌掺杂的钛酸锶，阻挡层（3）是未掺杂的钛酸锶，并且超导体（1）是具有晶格常数至少大致相似于 衬底（2）和屏障（3）层的材料之一。 这种类型的优选材料是YBa2Cu3O7-δ，其中0≤δ≤0.5。
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