Disclosed is imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconductive layer, a first overcoating layer of nonstoichiometric silicon nitride with from between 5 to 33 atomic percent of nitrogen and 95 to 67 atomic percent of silicon, and a second overcoating layer thereover of near stoichiometric silicon nitride with from between 33 to 57 atomic percent of nitrogen, and 67 to 43 atomic percent of silicon.