发明授权
- 专利标题： Write circuit for use in semiconductor storage device
- 专利标题（中）： 用于半导体存储设备的写电路
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申请号： US685552申请日： 1984-12-24
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公开(公告)号： US4665505A公开(公告)日： 1987-05-12
- 发明人: Nobuaki Miyakawa , Yoshiaki Yazawa , Shoichi Ozeki , Kinya Mitsumoto
- 申请人： Nobuaki Miyakawa , Yoshiaki Yazawa , Shoichi Ozeki , Kinya Mitsumoto
- 申请人地址： JPX both of JPX both of
- 专利权人： Hitachi, Ltd.,Hitachi Haramachi Semi-Conductor Ltd.
- 当前专利权人： Hitachi, Ltd.,Hitachi Haramachi Semi-Conductor Ltd.
- 当前专利权人地址： JPX both of JPX both of
- 优先权： JPX58-249710 19831226
- 主分类号： G11C11/413
- IPC分类号： G11C11/413 ; G11C7/10 ; G11C11/40
摘要：
A write circuit for a semiconductor storage device which comprises a data output stage constructed by a composite circuit including at least one MOS transistor logic circuit and bipolar transistor. The Mos transistor circuit operates in response to an input signal to control the on-off states of at least one of the bipolar transistors. The write circuit implements less power consumption.
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