发明授权
US4668481A Apparatus for manufacturing a compound-semiconductor single crystal by
the liquid encapsulated czochralski (LEC) process
失效
通过液体封装的切克萨斯基（LEC）工艺制造化合物半导体单晶的装置
- 专利标题： Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process
- 专利标题（中）： 通过液体封装的切克萨斯基（LEC）工艺制造化合物半导体单晶的装置
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申请号： US707810申请日： 1985-03-04
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公开(公告)号： US4668481A公开(公告)日： 1987-05-26
- 发明人: Masayuki Watanabe , Sadao Yashiro
- 申请人： Masayuki Watanabe , Sadao Yashiro
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX59-80211 19840423
- 主分类号： C30B15/10
- IPC分类号： C30B15/10 ; C30B15/14 ; C30B27/02
摘要：
A compound-semiconductor single-crystal-manufacturing apparatus comprises a crucible for holding a molten raw material of GaAs and a liquid capsule element of B.sub.2 O.sub.3, a crucible holder, a heat element concentrically surrounding the crucible, and a heat-shielding unit surrounding the heat element, for use in manufacturing a GaAs single crystal by progressively pulling it up from the raw molten material held in the crucible by the liquid encapsulated Czochralski (LEC) process. The heat-shielding unit and crucible holder are formed by molding a sintered aluminum nitride (AlN) element.
公开/授权文献
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