发明授权
- 专利标题： Amorphous silicon semiconductor and process for same
- 专利标题（中）： 非晶硅半导体及其工艺相同
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申请号： US751410申请日： 1985-07-03
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公开(公告)号： US4670762A公开(公告)日： 1987-06-02
- 发明人: Kazunori Tsuge , Yoshihisa Tawada , Yoshihiro Hamakawa
- 申请人： Kazunori Tsuge , Yoshihisa Tawada , Yoshihiro Hamakawa
- 申请人地址： JPX Osaka
- 专利权人： Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
- 当前专利权人： Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; C23C16/48 ; H01L21/205 ; H01L45/00
摘要：
A process for preparing an amorphous silicon semiconductor comprising steps of plasma decomposing silicon compounds and carrying out photolysis of the silicon compounds. According to the process, a growth rate of the semiconductor is greatly increased. The obtained amorphous silicon semiconductor has excellent electrical and optical properties and is useful as a photovoltaic element.