发明授权
- 专利标题: Ion implanter target chamber
- 专利标题(中): 离子注入机靶室
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申请号: US772237申请日: 1985-09-03
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公开(公告)号: US4672210A公开(公告)日: 1987-06-09
- 发明人: Allen E. Armstrong , Victor M. Benveniste , Geoffrey Ryding
- 申请人: Allen E. Armstrong , Victor M. Benveniste , Geoffrey Ryding
- 申请人地址: OH Cleveland
- 专利权人: Eaton Corporation
- 当前专利权人: Eaton Corporation
- 当前专利权人地址: OH Cleveland
- 主分类号: H01L21/265
- IPC分类号: H01L21/265 ; H01J37/317 ; H01L21/00 ; H01J37/00
摘要:
A target chamber for a mechanically scanned ion implanter in which semiconductor wafers are maintained in contact with a rotating target disk entirely by body forces, thus eliminating the need for clamping members contacting the wafer surface. The axis of the disk is inclined, and the disk is in the form of a shallow dish having an inclined rim with cooled wafer-receiving stations formed on the inner surface of the rim. Centrifugal force is relied on to force the wafers against the cooled disk. Each wafer-receiving station includes fence structures which are engaged by the wafer during loading and when the disk is spinning. The fence structures are resilient so that wafer damage and thus particulate contamination is minimized. In accordance with another aspect of the invention the ion beam is projected against the wafers obliquely to the radius of the disk as to minimize striping effects and overscan.
公开/授权文献
- US5746727A Safety needle assembly having telescoping shield 公开/授权日:1998-05-05
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