摘要:
A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.
摘要:
A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon.
摘要:
An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.
摘要:
An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.
摘要:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
摘要:
This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the flux and/or a cross-sectional profile of the ion beam used for implantation. It is often desirable to measure the flux and/or cross-sectional profile of an ion beam in an ion implanter in order to improve control of ion implantation of a semiconductor wafer or similar. The present invention describes adapting the wafer holder to allow such beam profiling to be performed. The substrate holder may be used progressively to occlude the ion beam from a downstream flux monitor or a flux monitor may be located on the wafer holder that is provided with a slit entrance aperture.
摘要:
An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P+++ for subsequent acceleration for high energy implantation.
摘要:
A force compensator is provided for a semiconductor processing apparatus having a moving member, in order to compensate for a fixed force on the moving member, such as gravity or atmospheric pressure. A vacuum and piston combination is connected between the movable member and a reaction point. One side of the piston is open to atmosphere and the other side defines an enclosed region which is evacuated. The cylinder is evacuated to a pressure which does not exceed 10% of ambient pressure during operation of the device, so that pressure changes in the low pressure region have minimal effect on the compensation force during movement of the movable member over its displacement range.
摘要:
A vacuum bearing structure comprises a combination of a planar gas bearing with a differentially-pumped vacuum seal. The bearing surface and the vacuum seal surfaces are formed of a porous material divided into a first outer region through which bearing gas can percolate to provide support and an inner second region providing the vacuum seal. An exhaust groove separates the two regions so that bearing gas can flow to atmosphere. The resulting structure can operate at a lower fly height to reduce loading on the differentially-pumped vacuum seal. The structure is particularly useful for motion feedthroughs into vacuum processes such as ion implantation.
摘要:
A vacuum seal and fluid bearing apparatus for reducing the distortion of the bearing surfaces of a gas bearing is described. The apparatus includes a stator attached around an aperture in a vacuum housing and having a first planar fluid bearing surface. A movable member for closing the vacuum housing aperture having a second fluid bearing surface extending parallel to the first bearing surface is adapted to be supported spaced from the first bearing surface by a bearing fluid. A vacuum seal is provided between the movable member and the stator. In use, a force due to atmospheric pressure acts on the movable member in a direction normal to the bearing surfaces and a movable member includes a pressure relief structure to reduce any bending moment produced in the movable member by the force.