发明授权
- 专利标题: Continuous sputtering apparatus
- 专利标题(中): 连续溅射装置
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申请号: US645671申请日: 1984-08-30
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公开(公告)号: US4675096A公开(公告)日: 1987-06-23
- 发明人: Hideki Tateishi , Tamotsu Shimizu , Susumu Aiuchi , Katsuhiro Iwashita , Hiroshi Nakamura
- 申请人: Hideki Tateishi , Tamotsu Shimizu , Susumu Aiuchi , Katsuhiro Iwashita , Hiroshi Nakamura
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX58-160388 19830902
- 主分类号: B65G49/07
- IPC分类号: B65G49/07 ; C23C14/34 ; C23C14/56 ; H01L21/203 ; C23C14/36
摘要:
A continuous sputtering apparatus comprising a main vacuum chamber, one loading station and a plurality of process stations capable of having their pressures controlled separately. The process station includes a sub vacuum chamber capable of being in communication with the main vacuum chamber through an opening and an evacuation port. The loading station and the process stations are arranged to be spaced with equal angles. Substrate holders are provided to face the stations and are rotated by said equal angle in a time. The substrate holder opens and closes the opening of the sub vacuum chamber to serve as a gate valve.
公开/授权文献
- US5873739A Direct circuit to circuit stored energy connector 公开/授权日:1999-02-23
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