发明授权
- 专利标题： Superlattice photoconductor
- 专利标题（中）： 超晶格光电导体
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申请号： US745277申请日： 1985-06-14
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公开(公告)号： US4679061A公开(公告)日： 1987-07-07
- 发明人: Federico Capasso , Alfred Y. Cho , Albert L. Hutchinson , Khalid Mohammed
- 申请人： Federico Capasso , Alfred Y. Cho , Albert L. Hutchinson , Khalid Mohammed
- 申请人地址： NJ Murray Hill
- 专利权人： American Telephone and Telegraph Company, AT&T Bell Laboratories
- 当前专利权人： American Telephone and Telegraph Company, AT&T Bell Laboratories
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L31/0264
- IPC分类号： H01L31/0264 ; G02B6/12 ; H01L31/0352 ; H01L31/10 ; H01L33/00 ; H01L27/12
摘要：
Photoconductive gain is observed in a device comprising a superlattice having well and barrier layers, and cladding layers on the opposite sides of the superlattice with the barrier layers of the superlattice having an energy bandgap greater than the bandgap of the cladding layers.
公开/授权文献
- US5143029A Two cycle internal combustion hydrocycle engine 公开/授权日：1992-09-01
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