发明授权
- 专利标题: Method of manufacturing thin film transistor
- 专利标题(中): 制造薄膜晶体管的方法
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申请号: US829001申请日: 1986-02-13
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公开(公告)号: US4684435A公开(公告)日: 1987-08-04
- 发明人: Kohhei Kishi , Mitsuhiro Koden , Fumiaki Funada
- 申请人: Kohhei Kishi , Mitsuhiro Koden , Fumiaki Funada
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX60-27393 19850213; JPX60-27394 19850213
- 主分类号: G02F1/1368
- IPC分类号: G02F1/1368 ; H01L21/308 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/786 ; H01L21/306 ; C23F1/02
摘要:
An improved process for manufacturing a thin film transistor uses two masks for etching and therefore one mask alignment. The technical effect of said process is to provide the thin film transistor with low cost and enhanced yield.