发明授权
- 专利标题： Plasma enhanced CVD
- 专利标题（中）： 等离子体增强CVD
-
申请号： US861793申请日： 1986-05-12
-
公开(公告)号： US4692343A公开(公告)日： 1987-09-08
- 发明人: J. B. Price , Schyi-Yi Wu
- 申请人： J. B. Price , Schyi-Yi Wu
- 申请人地址： AZ Phoenix
- 专利权人： Spectrum CVD, Inc.
- 当前专利权人： Spectrum CVD, Inc.
- 当前专利权人地址： AZ Phoenix
- 主分类号： C23C16/48
- IPC分类号： C23C16/48 ; B05D3/06
摘要：
Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
公开/授权文献
- US5836466A Safety closure and container assembly 公开/授权日：1998-11-17
信息查询
IPC分类:
