发明授权
- 专利标题： Semiconductor memory device having a redundancy circuit
- 专利标题（中）： 具有冗余电路的半导体存储器件
-
申请号： US763269申请日： 1985-08-07
-
公开(公告)号： US4701887A公开(公告)日： 1987-10-20
- 发明人: Junji Ogawa
- 申请人： Junji Ogawa
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX59-168772 19840814
- 主分类号： G06F12/16
- IPC分类号： G06F12/16 ; G11C29/00 ; G11C29/04 ; G11C11/40
摘要：
A semiconductor memory device includes a random-access memory which has at least one redundancy column for replacing a defective column; a serial output circuit receives data read out in parallel from the random-access memory and serially outputs the received data redundancy circuit replaces data of the defective column with data from the redundancy column.
信息查询
