发明授权
- 专利标题： Doping for low capacitance amorphous silicon field effect transistor
- 专利标题（中）： 掺杂低电容非晶硅场效应晶体管
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申请号： US761981申请日： 1985-08-02
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公开(公告)号： US4704623A公开(公告)日： 1987-11-03
- 发明人: William W. Piper , George E. Possin
- 申请人： William W. Piper , George E. Possin
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; G02F1/136 ; G02F1/1368 ; G09F9/35 ; H01L27/12 ; H01L29/417 ; H01L29/786
摘要：
An amorphous silicon thin film FET is doped and structured to be particularly useful for use in liquid crystal display circuits. In particular, critical FET dimensions are provided along with doping levels and locations which permit optimal reduction of source to gate capacitance, while at the same time, preventing the occurrence of large contact voltage drops. Critical dimensions include active channel length, source-gate overlap, and amorphous silicon thickness. A critical relationship is established amongst these parameters and amorphous silicon doping levels.
公开/授权文献
- US5814768A Twisted pairs communications cable 公开/授权日：1998-09-29
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