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US4706154A Circuit arrangement for protecting a CRT and associated circuitry from damage due to arcing 失效
电路布置，用于保护CRT和相关电路免受由于电弧引起的损坏

  • 专利标题： Circuit arrangement for protecting a CRT and associated circuitry from damage due to arcing
  • 专利标题（中）： 电路布置，用于保护CRT和相关电路免受由于电弧引起的损坏
  • 申请号： US798658
    申请日： 1985-11-15
  • 公开(公告)号： US4706154A
    公开(公告)日： 1987-11-10
  • 发明人: Bruce K. Baur
  • 申请人： Bruce K. Baur
  • 申请人地址： OR Beaverton
  • 专利权人： Tektronix, Inc.
  • 当前专利权人： Tektronix, Inc.
  • 当前专利权人地址： OR Beaverton
  • 主分类号： H02H3/20
  • IPC分类号： H02H3/20 ;  G01R13/22 ;  G01R19/165 ;  G09G1/00 ;  H04N3/20 ;  H02H9/04
Circuit arrangement for protecting a CRT and associated circuitry from damage due to arcing
摘要：
A silicon controlled rectifier (SCR) is connected between a selected electrode of a CRT and a reference potential level that is negative relative to the selected CRT electrode. The SCR remains non-conductive so long as the voltage between the selected electrode and the reference potential level remains below the breakdown voltage of the SCR and the SCR's dv/dt rating is not exceeded. If the voltage between the electrode and the reference potential level increases at a rate that exceeds the threshold rate for the SCR, the SCR turns on and shorts the selected electrode to the reference potential level.
摘要（中）：

可控硅整流器（SCR）连接在CRT的选定电极和相对于所选CRT电极为负的参考电位电平之间。 只要所选择的电极和参考电位电平之间的电压保持低于SCR的击穿电压，并且不超过SCR的dv / dt额定值，则SCR保持不导通。 如果电极和参考电位电平之间的电压以超过SCR的阈值速率的速率增加，则SCR导通并将所选择的电极短路到参考电位电平。

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