发明授权
US4709214A Integrated Hall element and amplifier with controlled offset voltage
失效
具有受控失调电压的集成霍尔元件和放大器
- 专利标题: Integrated Hall element and amplifier with controlled offset voltage
- 专利标题(中): 具有受控失调电压的集成霍尔元件和放大器
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申请号: US856562申请日: 2986-04-28
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公开(公告)号: US4709214A公开(公告)日: 1987-11-24
- 发明人: Jacob K. Higgs
- 申请人: Jacob K. Higgs
- 申请人地址: MA North Adams
- 专利权人: Sprague Electric Company
- 当前专利权人: Sprague Electric Company
- 当前专利权人地址: MA North Adams
- 主分类号: H01L43/06
- IPC分类号: H01L43/06 ; H01L27/22 ; H03F15/00
摘要:
An integrated circuit includes an epitaxial layer. In a near central region thereof is formed a symmetrical array of four equal sized Hall cells that are connected in parallel to form one Hall element. A moat surrounds the Hall element consisting of two concentric isolation walls separated by a band of opposite conductivity epitaxial material. The output of the Hall element is connected to the input of an adjacent differential amplifier that has two extraordinarily large amplifying transistors with emitter areas each equal to about a half of a Hall area, for achieving much better control over the relative dimensions of these emitters and thus over the amplifier offset voltage from chip to chip. The emitter resistors are likewise made very wide and both pairs of components are physically arranged to have balanced thermal coupling to the Hall element for further enhancing control of offset voltage.
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