发明授权
- 专利标题： Photomask material
- 专利标题（中）： 光掩模材料
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申请号： US837355申请日： 1986-03-06
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公开(公告)号： US4717625A公开(公告)日： 1988-01-05
- 发明人: Yaichiro Watakabe , Shuichi Matsuda
- 申请人： Yaichiro Watakabe , Shuichi Matsuda
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-192815 19850830
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F1/58 ; H01L21/027 ; B32B15/00 ; B32B17/06 ; G03F9/00
摘要：
A transition metal silicide film 3 is formed on a transparent substrate 1, and an oxidized transition metal silicide film 4 is formed on said transition metal silicide film 3. Dry etching can be easily applied to the transition metal silicide film 3 and the oxidized transition metal silicide film 4. Since the silicified metal films have good adhesion to the transparent substrate 1, the fine patterns can hardly be detached at the time of mask rinsing. In addition, the oxidized transition metal silicide film 4 has a low reflection factor, which prevents the lowering of the resolution.
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