发明授权
US4728371A Method for manufacturing regions having adjustable uniform doping in
silicon crystal wafers by neutron irradiation
失效
用于通过中子照射制造在硅晶片中具有可调均匀掺杂的区域的方法
- 专利标题: Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation
- 专利标题(中): 用于通过中子照射制造在硅晶片中具有可调均匀掺杂的区域的方法
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申请号: US838326申请日: 1986-03-11
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公开(公告)号: US4728371A公开(公告)日: 1988-03-01
- 发明人: Ernst W. Haas , Joachim Martin , Heinz Mitlehner , Reinhold Kuhnert
- 申请人: Ernst W. Haas , Joachim Martin , Heinz Mitlehner , Reinhold Kuhnert
- 申请人地址: DEX Berlin and Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Berlin and Munich
- 优先权: DEX3511363 19850328
- 主分类号: C30B29/06
- IPC分类号: C30B29/06 ; C30B31/20 ; H01L21/261 ; H01L21/263
摘要:
A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si.sup.30 (n,.gamma.) Si.sup.31 .beta..sup.- P.sup.31 includes the steps of covering the silicon crystal wafer with neutron-absorbing materials of different thicknesses during the irradiation, and selecting materials having isotopes having a high absorption cross-section which yield stable isotopes in the nuclear reaction having small or short-lived activity. Suitable isotopes are B.sup.10, Cd.sup.113, Sm.sup.149, Gd.sup.155 and Gd.sup.157. The regions are generated photolithographically. By such specific material selection, very small layer thicknesses can be used and microfine surface zones or areas can be doped with high geometrical precision and large penetration depth. The method is particularly suited for manufacturing power thyristors.
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