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    Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation
    1.
    发明授权
    Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation 失效
    用于通过中子照射制造在硅晶片中具有可调均匀掺杂的区域的方法

    公开(公告)号：US4728371A

    公开(公告)日：1988-03-01

    申请号：US838326

    申请日：1986-03-11

    申请人： Ernst W. Haas ,  Joachim Martin ,  Heinz Mitlehner ,  Reinhold Kuhnert

    发明人： Ernst W. Haas ,  Joachim Martin ,  Heinz Mitlehner ,  Reinhold Kuhnert

    IPC分类号： C30B29/06 ,  C30B31/20 ,  H01L21/261 ,  H01L21/263

    CPC分类号： C30B31/20 ,  H01L21/261 ,  Y10S148/165

    摘要： A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si.sup.30 (n,.gamma.) Si.sup.31 .beta..sup.- P.sup.31 includes the steps of covering the silicon crystal wafer with neutron-absorbing materials of different thicknesses during the irradiation, and selecting materials having isotopes having a high absorption cross-section which yield stable isotopes in the nuclear reaction having small or short-lived activity. Suitable isotopes are B.sup.10, Cd.sup.113, Sm.sup.149, Gd.sup.155 and Gd.sup.157. The regions are generated photolithographically. By such specific material selection, very small layer thicknesses can be used and microfine surface zones or areas can be doped with high geometrical precision and large penetration depth. The method is particularly suited for manufacturing power thyristors.

    摘要翻译： 根据反应Si30（n，γ）Si31β-P31通过中子照射在硅晶片中制造具有可调均匀掺杂的区域的方法包括以下步骤：在照射期间用不同厚度的中子吸收材料覆盖硅晶片 以及选择具有高吸收截面的同位素的材料，其在具有小或短寿命的核反应中产生稳定的同位素。 合适的同位素是B10，Cd113，Sm149，Gd155和Gd157。 光刻地产生这些区域。 通过这样的具体材料选择，可以使用非常小的层厚度，并且可以以高几何精度和大的穿透深度掺杂微细表面区域或区域。 该方法特别适用于制造功率晶闸管。