发明授权
- 专利标题: Avalanche photo diode with quantum well layer
- 专利标题(中): 具有量子阱层的雪崩光电二极管
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申请号: US892479申请日: 1986-08-05
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公开(公告)号: US4731641A公开(公告)日: 1988-03-15
- 发明人: Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
- 申请人: Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
- 申请人地址: JPX Tokyo
- 专利权人: Kokusai Denshin Denwa Kabushiki Kaisha
- 当前专利权人: Kokusai Denshin Denwa Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX56-159967 19811007
- 主分类号: H01L31/107
- IPC分类号: H01L31/107 ; H01L31/18 ; H01L29/201 ; H01L27/14 ; H01L31/08
摘要:
An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
公开/授权文献
- US5947049A Buoyant walkway module for a boatlift 公开/授权日:1999-09-07