发明授权
- 专利标题: Process for fabricating solid-state imaging device
- 专利标题(中): 制造固态成像装置的方法
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申请号: US77157申请日: 1987-07-24
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公开(公告)号: US4735908A公开(公告)日: 1988-04-05
- 发明人: Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri , Yoshihiro Ono , Mitsuo Saitou , Hiroshi Tamura , Mitsuru Ikeda
- 申请人: Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri , Yoshihiro Ono , Mitsuo Saitou , Hiroshi Tamura , Mitsuru Ikeda
- 申请人地址: JPX Kanagawa
- 专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX59-220547 19841022; JPX59-257686 19841207
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L31/0224 ; H01L21/283
摘要:
A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.
公开/授权文献
- USD415494S Loud speaker 公开/授权日:1999-10-19
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