发明授权
- 专利标题: Magnetic bubble memory device
- 专利标题(中): 磁性气泡记忆装置
-
申请号: US752587申请日: 1985-07-08
-
公开(公告)号: US4744051A公开(公告)日: 1988-05-10
- 发明人: Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
- 申请人: Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX59-140514 19840709; JPX59-244437 19841121; JPX60-4058 19850116
- 主分类号: G11C19/08
- IPC分类号: G11C19/08
摘要:
A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.
公开/授权文献
信息查询