发明授权
- 专利标题: Ion-producing apparatus
- 专利标题(中): 离子产生装置
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申请号: US54496申请日: 1987-05-27
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公开(公告)号: US4749912A公开(公告)日: 1988-06-07
- 发明人: Tamio Hara , Manabu Hamagaki , Yoshinobu Aoyagi , Susumu Namba , Nobuo Ishii , Naoki Takayama , Kohei Kawamura
- 申请人: Tamio Hara , Manabu Hamagaki , Yoshinobu Aoyagi , Susumu Namba , Nobuo Ishii , Naoki Takayama , Kohei Kawamura
- 申请人地址: JPX Wako JPX Tokyo
- 专利权人: Rikagaku Kenkyusho,Tokyo Electron Limited
- 当前专利权人: Rikagaku Kenkyusho,Tokyo Electron Limited
- 当前专利权人地址: JPX Wako JPX Tokyo
- 优先权: JPX61-121967 19860527; JPX62-21302 19870131; JPX62-21303 19870131; JPX62-21304 19870131; JPX62-53391 19870309
- 主分类号: H01J27/08
- IPC分类号: H01J27/08 ; G01T1/20 ; H01J27/00
摘要:
An ion-producing apparatus comprises an electron-producing vessel having an electron-producing chamber, an ion-producing vessel having an ion-producing chamber communicating with the electron-producing chamber, a cathode provided at one end of the electron-producing vessel, an accelerating electrode provided within the ion-producing chamber, for allowing passage of electrons, an anode provided between the cathode and the accelerating electrode, and a power supply circuit for providing a potential difference between the cathode and the anode, thereby to produce electrons in the gap between the cathode and the anode. A vacuum pump is provided for evacuating gas from the ion-producing chamber. A partition is provided within the electron-producing vessel, between the cathode and the anode to divide the electron-producing vessel into a cathode-side chamber and an anode-side chamber, and hinders a gas flow from the cathode-side chamber to the anode-side chamber to apply a pressure difference between both chambers.
公开/授权文献
- US6043499A Charge-up prevention method and ion implanting apparatus 公开/授权日:2000-03-28
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