发明授权
- 专利标题： C MOS IC and method of making the same
- 专利标题（中）： C MOS IC及其制作方法
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申请号： US799556申请日： 1985-11-19
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公开(公告)号： US4750026A公开(公告)日： 1988-06-07
- 发明人: Shigeo Kuninobu , Eisuke Ichinohe
- 申请人： Shigeo Kuninobu , Eisuke Ichinohe
- 申请人地址： JPX Kadoma
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Kadoma
- 优先权： JPX56-215229 19811224
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L21/82 ; H01L23/528 ; H01L27/04 ; H01L27/092 ; H01L27/118 ; H01L27/02
摘要：
In a C MOS IC as shown in FIG. 7(A) and FIG. 8, the IC comprises vertical row of horizontally long blocks, each block comprising p-type MOS transistor region and n-type MOS transistor region, the IC comprises horizontal wirings of aluminum (31, 32, 33) and vertical wirings of polycrystalline silicon (61, 62, 63, 64, 65, 41, 42), with insulation films on the upper side and on the lower side of the polycrystalline silicon film, between the rows (I, II, . . .), said horizontal aluminum wirings (31, 32, 33) and said polycrystalline silicon wiring (61, 62 . . ., 41, 42) being appropriately connected through openings (105, 105 . . .) formed in said insulation film inbetween, said vertical polycrystalline silicon wirings being connected through aluminum wirings in said blocks.
公开/授权文献
- US5832312A Watertight body for accommodating a photographic camera 公开/授权日：1998-11-03
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