发明授权
- 专利标题: Method for forming patterned tin oxide thin film element
- 专利标题(中): 形成图案化氧化锡薄膜元件的方法
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申请号: US68545申请日: 1987-07-01
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公开(公告)号: US4752501A公开(公告)日: 1988-06-21
- 发明人: David B. Hicks , Adolph L. Micheli , Shih-Chia Chang
- 申请人: David B. Hicks , Adolph L. Micheli , Shih-Chia Chang
- 申请人地址: MI Detroit
- 专利权人: General Motors Corporation
- 当前专利权人: General Motors Corporation
- 当前专利权人地址: MI Detroit
- 主分类号: G01N27/12
- IPC分类号: G01N27/12 ; H01B5/14 ; H05K3/06 ; B05D5/12
摘要:
A method is disclosed for forming a semiconductor tin oxide thin film on a selected region of a surface without forming the film on an adjacent region. An ink film composed of tin(II) carboxylate compound is applied to the surface and heated to partially decompose the compound. A positive photoresist layer is preferably applied to the partially decomposed layer and selectively irradiated to define a mask overlying the selected region. Unwanted photoresist material is dissolved from the adjacent region using an aqueous alkaline solution. It is found that the solution concurrently dissolves the underlying partially decomposed tin compound, without dissolving the compound protected by the mask. Thereafter, the mask is stripped, and the underlying tin compound is heated and further decomposed to produce the desired tin oxide thin film.
公开/授权文献
- US6051748A Hydrophile adhesive mass 公开/授权日:2000-04-18
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