发明授权
- 专利标题: Vialess shorting bars for magnetoresistive devices
- 专利标题(中): 磁阻器件的无极短路棒
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申请号: US8211申请日: 1987-01-28
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公开(公告)号: US4754431A公开(公告)日: 1988-06-28
- 发明人: Mark L. Jenson
- 申请人: Mark L. Jenson
- 申请人地址: MN Minneapolis
- 专利权人: Honeywell Inc.
- 当前专利权人: Honeywell Inc.
- 当前专利权人地址: MN Minneapolis
- 主分类号: H01F41/32
- IPC分类号: H01F41/32 ; G01R33/09 ; G11C11/15 ; H01F10/00 ; H01L43/08 ; H01L43/12
摘要:
A magnetic solid state device, such as a magnetoresistive memory cell, includes first and second layers of magnetoresistive material. The first and second layers are separated by a third layer which prevents exchange coupling between the magnetic dipoles of the first and second layers. The first, second and third layers are formed as a strip. A fourth layer of a resistive material, such as nitrogen doped tantalum, overlies the first layer. The fourth layer includes spaced, raised portions over which electrically conductive material, such as TiW, may be formed on top of the raised portions.
公开/授权文献
- US5850468A Flaw detection apparatus 公开/授权日:1998-12-15