发明授权
- 专利标题： Method for the microwave fabrication of boron doped semiconductor materials
- 专利标题（中）： 硼掺杂半导体材料的微波制造方法
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申请号： US850190申请日： 1986-04-10
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公开(公告)号： US4756924A公开(公告)日： 1988-07-12
- 发明人: Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
- 申请人： Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
- 申请人地址： MI Troy
- 专利权人： Energy Conversion Devices, Inc.
- 当前专利权人： Energy Conversion Devices, Inc.
- 当前专利权人地址： MI Troy
- 主分类号： G03G5/082
- IPC分类号： G03G5/082 ; H01L21/205 ; B05D3/06 ; B05D3/02
摘要：
A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.
公开/授权文献
- US6005416A Compiled self-resetting CMOS logic array macros 公开/授权日：1999-12-21
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