公开(公告)号：US4624862A

公开(公告)日：1986-11-25

申请号：US668435

申请日：1984-11-05

申请人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

发明人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

IPC分类号： C23C16/30 ,  C23C14/14 ,  C23C16/50 ,  G03G5/082 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  B05D5/12

CPC分类号： H01L31/206 ,  G03G5/08264 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

公开(公告)号：US4769682A

公开(公告)日：1988-09-06

申请号：US39888

申请日：1987-04-20

申请人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

发明人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

IPC分类号： G03G5/082 ,  H01L21/205 ,  H01L31/20 ,  H01L29/167

CPC分类号： H01L31/206 ,  G03G5/08264 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

摘要翻译： 改进的p型半导体合金膜，改进的基本上本征的非晶半导体合金膜，改进的光伏和光响应器件并入这种膜和r.f. 微波辉光放电方法。 改进的半导体合金膜优选至少包括通过辉光放电沉积的硅，所述化学物质至少包含硅和硼物质，当掺入到硅基质中时，它们基本保持单原子。 p型膜特别稳定，其特征在于非窄带隙，减小的体积应力，改善的形态，生长和粘附以及减少的剥离和开裂。 基本上本征的膜的特征在于显着降低了Staebler-Wronski降解。 该方法包括在辉光放电等离子体中引入不形成高级氢化硼或其它硼聚合物或低聚物的硼物质的新步骤。

公开(公告)号：US4756924A

公开(公告)日：1988-07-12

申请号：US850190

申请日：1986-04-10

申请人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

发明人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

IPC分类号： G03G5/082 ,  H01L21/205 ,  B05D3/06 ,  B05D3/02

CPC分类号： G03G5/08214 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

摘要： A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.

摘要翻译： 一种用于沉积p掺杂半导体合金材料的微波辉光放电方法，该材料的特征在于将硼物质单原子和四面体结合到半导体主体基质中，由此提供了一种p掺杂的半导体合金材料，其特征在于减小的体系应变 减少了不希望的形态生长的成核，改善了对基材的粘附力，并减少了剥离和开裂。

公开(公告)号：US4698234A

公开(公告)日：1987-10-06

申请号：US897449

申请日：1986-10-17

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US4637895A

公开(公告)日：1987-01-20

申请号：US718661

申请日：1985-04-01

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  C09K11/07

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US5298086A

公开(公告)日：1994-03-29

申请号：US990085

申请日：1992-12-14

申请人： Subhendu Guha ,  Chi C. Yang

发明人： Subhendu Guha ,  Chi C. Yang

IPC分类号： H01L31/04 ,  H01L31/076 ,  H01L31/20 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： The thicknesses of the intrinsic layers of the cells comprising a tandem photovoltaic device are selected so that the cell having the highest quality semiconductor material produces the lowest photocurrent. That cell will then be the dominant cell in the tandem device and its material properties will contribute disproportionately to the overall properties of the tandem device.

摘要翻译： 选择包括串联光伏器件的电池的本征层的厚度，使得具有最高质量半导体材料的电池产生最低的光电流。 然后，该电池将成为串联装置中的主要电池，并且其材料性质将不利地影响串联装置的整体性能。

公开(公告)号：US5569332A

公开(公告)日：1996-10-29

申请号：US511887

申请日：1995-08-07

申请人： Troy Glatfelter ,  Kevin Hoffman ,  Chi C. Yang ,  Subhendu Guha

发明人： Troy Glatfelter ,  Kevin Hoffman ,  Chi C. Yang ,  Subhendu Guha

IPC分类号： H01L31/052 ,  H01L31/076 ,  H01L31/06 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

摘要： An optically enhanced back reflector for a photovoltaic device includes a back reflector layer of aluminum having a multi-layered, reflectivity enhancement member deposed thereon. The multi-layer enhancement member includes at least one pair of first and second layers, the first layer having a low index of refraction and the second layer having a high index of refraction. A layer of transmissive conductive oxide is disposed between the optically enhanced back reflector and the photovoltaic device.

摘要翻译： 用于光伏器件的光学增强后反射器包括铝的后反射器层，其具有放置在其上的多层反射增强部件。 多层增强构件包括至少一对第一层和第二层，第一层具有低折射率，第二层具有高折射率。 透光导电氧化物层设置在光学增强后反射器和光电器件之间。

公开(公告)号：US5204272A

公开(公告)日：1993-04-20

申请号：US808209

申请日：1991-12-13

申请人： Subhendu Guha ,  Arindam Banerjee ,  Chi C. Yang

发明人： Subhendu Guha ,  Arindam Banerjee ,  Chi C. Yang

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32697 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/332 ,  Y02E10/548 ,  Y02P70/521

摘要： Open circuit voltage of photovoltaic devices manufactured by a microwave deposition process is increased by disposing a bias wire in the microwave energized plasma and applying a positive voltage of approximately 100 volts to the wire during only a portion of the time in which the intrinsic semiconductor layer is being deposited.

摘要翻译： 通过在微波激发的等离子体中设置偏置线并且在仅本征半导体层的时间的一部分时间内将约100伏的正电压施加到线来增加通过微波沉积工艺制造的光伏器件的开路电压 存放

公开(公告)号：US4379943A

公开(公告)日：1983-04-12

申请号：US330571

申请日：1981-12-14

申请人： Chi C. Yang ,  Arun Madan ,  Stanford R. Ovshinsky ,  David Adler

发明人： Chi C. Yang ,  Arun Madan ,  Stanford R. Ovshinsky ,  David Adler

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.

摘要翻译： 本公开涉及具有增强的短路电流和效率的光伏器件。 这些器件通过在先前沉积的掺杂非晶半导体合金层上沉积本体非晶半导体合金制成，该本体非晶半导体合金包括由非蚀刻起始材料的沉积和不同的第二本征层形成的与掺杂层相邻的第一本征层 在第一本征层的组成中。 第二本征层优选包括硅和氟，而第一本征非晶合金层不包括氟。 第一本征层可以由单独的硅烷气体的辉光放电分解形成。 第一本征层和第二本征层的厚度被调整以使其相应的电位滴与第二本征层相比第一本征层相对较薄。

公开(公告)号：US5334423A

公开(公告)日：1994-08-02

申请号：US10074

申请日：1993-01-28

申请人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

发明人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

IPC分类号： B05D5/12 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01J37/32357 ,  C23C16/511 ,  H01J37/32697

摘要： High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

摘要翻译： 高质量的半导体材料沉积在微波通电的辉光放电沉积工艺中，通过以足以在100％饱和模式下或接近100％饱和模式产生等离子体的功率水平通过微波能量激励处理气体并通过阻止沉积物质进入衬底而进行 以便将沉积速率降低到小于在100％饱和模式下操作的值。