发明授权
- 专利标题： Semiconductor photoelectric conversion device for light incident position detection
- 专利标题（中）： 用于光入射位置检测的半导体光电转换装置
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申请号： US712997申请日： 1985-03-18
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公开(公告)号： US4761547A公开(公告)日： 1988-08-02
- 发明人: Shigenori Torihata , Kazuto Togino , Akira Okamoto , Haruo Hashimoto , Yukitaka Takitani , Hisaakira Imaizumi , Hiroshi Miyata
- 申请人： Shigenori Torihata , Kazuto Togino , Akira Okamoto , Haruo Hashimoto , Yukitaka Takitani , Hisaakira Imaizumi , Hiroshi Miyata
- 申请人地址： JPX Tokyo
- 专利权人： Kabushiki Kaisha Komatsu Seisakusho
- 当前专利权人： Kabushiki Kaisha Komatsu Seisakusho
- 当前专利权人地址： JPX Tokyo
- 主分类号： G06F3/038
- IPC分类号： G06F3/038 ; G06F3/042 ; H01L27/144 ; H01L31/02 ; H01L31/0224 ; H01J40/14
摘要：
The position detector comprises a semiconductor layer of i type amorphous silicon layer and a P type amorphous silicon layer is formed on one surface thereof and an N type amorphous layer is formed on the opposite surface. A transparent resistance layer is formed on one surface of the semiconductor layer. Collector electrodes are provided at the sides of the resistance layer for deriving out a position signal.
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