发明授权
- 专利标题: Boron doped semiconductor materials and method for producing same
- 专利标题(中): 硼掺杂半导体材料及其制造方法
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申请号: US39888申请日: 1987-04-20
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公开(公告)号: US4769682A公开(公告)日: 1988-09-06
- 发明人: Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
- 申请人: Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
- 申请人地址: MI Troy
- 专利权人: Energy Conversion Devices, Inc.
- 当前专利权人: Energy Conversion Devices, Inc.
- 当前专利权人地址: MI Troy
- 主分类号: G03G5/082
- IPC分类号: G03G5/082 ; H01L21/205 ; H01L31/20 ; H01L29/167
摘要:
An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.
公开/授权文献
- USD381163S Wheeled refuse container axle 公开/授权日:1997-07-15
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