发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US63785申请日： 1987-06-19
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公开(公告)号： US4769686A公开(公告)日： 1988-09-06
- 发明人: Masatada Horiuchi , Ken Yamaguchi
- 申请人： Masatada Horiuchi , Ken Yamaguchi
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX58-55075 19830401; JPX58-1211985 19830704
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/336 ; H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/45 ; H01L29/78
摘要：
Herein disclosed is a semiconductor device, especially, an MISFET which can ensure a high breakdown voltage and operate at a high speed. The semiconductor device according to the present invention reduces the sheet resistance by using an impurity region, which has an impurity concentration not exceeding 10.sup.20 cm.sup.-3, in a drain or source region and by forming a metal silicide layer on the surface of the impurity region. Moreover, the semiconductor device of the present invention is constructed such that the impurity concentration of an n-type drain or source region does not exceed 10.sup.20 cm.sup.-3 whereas the impurity concentration of a p-type drain or source region does not exceed 10.sup.19 cm.sup.-3 and such that at least one portion of the drain or source region is made of a metal silicide so that it can effectively protect the latch-up phenomenon which is caused when two or more semiconductor devices of different conductive type are integrated.
公开/授权文献
- US5979039A Transfer line 公开/授权日：1999-11-09