发明授权
- 专利标题： Lateral bipolar transistor and method of producing the same
- 专利标题（中）： 侧面双极晶体管及其制造方法
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申请号： US40125申请日： 1987-04-20
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公开(公告)号： US4769687A公开(公告)日： 1988-09-06
- 发明人: Kazuo Nakazato , Tohru Nakamura , Masataka Kato , Takahiro Okabe
- 申请人： Kazuo Nakazato , Tohru Nakamura , Masataka Kato , Takahiro Okabe
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX59-25029 19840215
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/225 ; H01L21/285 ; H01L21/331 ; H01L29/10 ; H01L29/735 ; H01L29/72 ; H01L27/04 ; H01L29/54
摘要：
A lateral bipolar transistor affording a good controllability for a base length is disclosed.In fabricating a lateral bipolar transistor by forming a single crystal column and disposing heavily doped polycrystalline regions on both sides of the column, contact surfaces between the single crystal column and the heavily doped polycrystalline regions are controlled by etching of an oxide film. The etching of the oxide film can provide a device of a precision higher than attained by controlling any other element.
公开/授权文献
- US06036212A Damping system having separately adjustable damping circuits 公开/授权日：2000-03-14
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