发明授权
- 专利标题： Power bipolar transistor
- 专利标题（中）： 功率双极晶体管
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申请号： US73861申请日： 1987-07-16
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公开(公告)号： US4769688A公开(公告)日： 1988-09-06
- 发明人: David R. Cotton
- 申请人： David R. Cotton
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 优先权： GBX8511381 19850503
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/06 ; H01L29/73 ; H01L29/732 ; H01L29/72 ; H01L27/02
摘要：
A bipolar power transistor having a plurality of elongated emitter parts connected to a common emitter metallization is provided with a shaped resistive region between the emitter parts and the emitter metallization, in order to compensate for differences in the resistance presented by the metallization itself.
公开/授权文献
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