Invention Grant
- Patent Title: Selenium alloy imaging member
- Patent Title (中): 硒合金成像构件
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Application No.: US946238Application Date: 1986-12-23
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Publication No.: US4770965APublication Date: 1988-09-13
- Inventor: William D. Fender , Robert C. Speiser , Gerhard K. Kramer , Hans P. Ceelen
- Applicant: William D. Fender , Robert C. Speiser , Gerhard K. Kramer , Hans P. Ceelen
- Applicant Address: CT Stamford
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: CT Stamford
- Main IPC: G03G5/02
- IPC: G03G5/02 ; G03G5/043 ; G03G5/08 ; G03G5/082 ; G03G5/14 ; G03G5/147
Abstract:
An electrophotographic imaging member comprising providing a conductive substrate, an alloy layer comprising selenium doped with arsenic having a thickness of between about 100 micrometers and about 400 micrometers, the alloy layer comprising between about 0.3 percent and about 2 percent by weight arsenic at the surface of the alloy layer facing away from the conductive substrate and comprising crystalline selenium having a thickness of from about 0.01 micrometer to about 1 micrometer contiguous to the conductive substrate, and a thin protective overcoating layer on the alloy layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine. This photoreceptor is prepared by providing a conductive substrate, cleaning the substrate, heating an alloy comprising selenium and from about 0.05 percent to about 2 percent by weight arsenic until from about 2 percent to about 90 percent by weight of the selenium in the alloy is crystallized, vacuum depositing the alloy on the substrate to form a vitreous photoconductive insulating layer having a thickness of between about 100 micrometers and about 400 micrometers containing between about 0.3 percent and about 2 percent by weight arsenic at the surface of the photoconductive insulating layer facing away from the conductive substrate, applying thin protective overcoating layer on the photoconductive insulating layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine, and heating the photoconductive insulating layer until only the selenium in the layer adjacent the substrate crystallizes to form a continuous substantially uniform crystalline layer having a thickness up to about one micrometer.
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