公开(公告)号：US4770965A

公开(公告)日：1988-09-13

申请号：US946238

申请日：1986-12-23

Applicant: William D. Fender ,  Robert C. Speiser ,  Gerhard K. Kramer ,  Hans P. Ceelen

Inventor： William D. Fender ,  Robert C. Speiser ,  Gerhard K. Kramer ,  Hans P. Ceelen

IPC: G03G5/02 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/14 ,  G03G5/147

CPC classification number: G03G5/0436 ,  G03G5/08207 ,  G03G5/14708

Abstract: An electrophotographic imaging member comprising providing a conductive substrate, an alloy layer comprising selenium doped with arsenic having a thickness of between about 100 micrometers and about 400 micrometers, the alloy layer comprising between about 0.3 percent and about 2 percent by weight arsenic at the surface of the alloy layer facing away from the conductive substrate and comprising crystalline selenium having a thickness of from about 0.01 micrometer to about 1 micrometer contiguous to the conductive substrate, and a thin protective overcoating layer on the alloy layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine. This photoreceptor is prepared by providing a conductive substrate, cleaning the substrate, heating an alloy comprising selenium and from about 0.05 percent to about 2 percent by weight arsenic until from about 2 percent to about 90 percent by weight of the selenium in the alloy is crystallized, vacuum depositing the alloy on the substrate to form a vitreous photoconductive insulating layer having a thickness of between about 100 micrometers and about 400 micrometers containing between about 0.3 percent and about 2 percent by weight arsenic at the surface of the photoconductive insulating layer facing away from the conductive substrate, applying thin protective overcoating layer on the photoconductive insulating layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine, and heating the photoconductive insulating layer until only the selenium in the layer adjacent the substrate crystallizes to form a continuous substantially uniform crystalline layer having a thickness up to about one micrometer.

Abstract translation: 一种电子照相成像构件，包括提供导电基底，包含掺杂有砷的硒的合金层，其厚度为约100微米至约400微米，所述合金层包含在表面的约0.3重量％至约2重量％的砷 所述合金层背离所述导电基底并且包含结晶硒，所述结晶硒的厚度为所述导电基底的约0.01微米至约1微米，所述合金层上具有薄的保护性外涂层，所述外涂层的厚度介于约 0.05微米和约0.3微米，并且包含约0.5重量％至约3重量％的苯胺黑。 该感光体通过提供导电基底，清洁基底，加热包含硒的合金和约0.05％至约2％重量的砷直到合金中的硒的约2％至约90％重量被结晶 在该基片上真空沉积该合金以形成一层玻璃状光导电绝缘层，其厚度介于约100微米至约400微米之间，该光电导绝缘层的光电导绝缘层的表面上的砷含量为约0.3％至约2％ 所述导电衬底，在所述光电导绝缘层上施加薄的保护性外涂层，所述外涂层具有约0.05微米至约0.3微米的厚度，并且包含约0.5％至约3％重量的苯胺黑，并加热所述光电导绝缘层直到 只有硒层在相邻的层中 e衬底结晶以形成具有高达约1微米厚度的连续的基本上均匀的结晶层。