发明授权
- 专利标题: Method of manufacturing solid-state image sensor
- 专利标题(中): 制造固态图像传感器的方法
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申请号: US51590申请日: 1987-05-20
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公开(公告)号: US4772565A公开(公告)日: 1988-09-20
- 发明人: Takaaki Kamimura , Hidetoshi Nozaki , Masahiko Hirose
- 申请人: Takaaki Kamimura , Hidetoshi Nozaki , Masahiko Hirose
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX61-116657 19860521; JPX61-166019 19860715
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; H01L27/146 ; H01L31/20 ; H01L27/14 ; H01L31/02
摘要:
A method of manufacturing a solid-state image sensor comprises the steps of preparing a solid-state image sensor substrate in which a signal charge storing diode and a signal charge readout section are formed and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate. The amorphous silicon film is formed by introducing a source gas containing silicon compounds on the substrate and decomposing the source gas by radiating ultraviolet light on the source gas while the solid-state image sensor substrate is kept at a temperature of 100.degree. to 350.degree. C.
公开/授权文献
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