发明授权
- 专利标题： High speed switching field effect transistor
- 专利标题（中）： 高速开关场效应晶体管
-
申请号： US935171申请日： 1986-11-26
-
公开(公告)号： US4772925A公开(公告)日： 1988-09-20
- 发明人: Tadashi Fukuzawa , Ken Yamaguchi , Susumu Takahashi , Hisao Nakashima , Michiharu Nakamura
- 申请人： Tadashi Fukuzawa , Ken Yamaguchi , Susumu Takahashi , Hisao Nakashima , Michiharu Nakamura
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX55-152088 19801031
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/331 ; H01L21/338 ; H01L29/10 ; H01L29/73 ; H01L29/778 ; H01L29/812 ; H01L27/12 ; H01L29/161 ; H01L29/205
摘要：
The semiconductor device of this invention consists at least of a laminate of a semi-insulating or p-type first semiconductor layer having a forbidden band width E.sub.g1, an undoped or p.sup.- -type second semiconductor layer having a forbidden band width E.sub.g2 and an n-type third semiconductor layer having forbidden band width E.sub.g3. The laminate is deposited on a predetermined semiconductor substrate and the forbidden band width has the relation E.sub.g2
公开/授权文献
- US5289813A Two speed mechanical supercharger 公开/授权日：1994-03-01
信息查询
IPC分类:
